Saturday, June 23, 2012:
2012 INTERNATIONAL MICROWAVE SYMPOSIUM, MONTREAL, CANADA: Toshiba America Electronic Components Inc. (TAEC) has announced a Ka-Band High Power gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class.
Targeted to SATCOM applications such as high definition video broadcast and broadband data communication, Toshiba is planning to release a complete family of Ka-Band products to support those applications.
Ka-Band SATCOM has been on the rise, and is continuing to show steady growth to support broadband communication and increasing demand for higher bandwidth in SATCOM frequencies.
Due to the limited availability of high power microwave Solid-State devices, replacing tube-base amplifiers with Solid-State Power Amplifiers (SSPA) for Ka-Band has not been a cost-effective design option. Toshiba's new Ka-Band MMIC will provide a solution to support the anticipated surge of solid-state amplifiers to the millimeter wave frequency range for SATCOM applications.